Measurement of specific contact resistivity using scanning voltage probes

摘要

Specific contact resistivity measurements have conventionally been heavy inboth fabrication and simulation/calculation in order to account for complicatedgeometries and other effects such as parasitic resistance. We propose a simplergeometry to deliver current, and the use of a scanning voltage probe to sensethe potential variation along the sample surface, from which the specificcontact resistivity can be straightforwardly deduced. We demonstrate ananalytical example in the case where both materials are thin films.Experimental data with a scanning Kelvin probe measurement on graphene from theliterature corroborates our model calculation.